Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RP0404DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:4, Organization:1MX4, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRenesas Electronics Corporation R1RP0404DGE-2PR Sram, Memory Density:4.1943 Mbit, Memory Width:4, Organization:1MX4, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:12 ns
DescriptionRENESAS R1RP0404DGE2PR Integrated Circuit, Silicon Switching Diode (for Highspeed Switching) Silicon Switching Diode (for Highspeed Switching)
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| # | Name |
|---|---|
| 1 | R1RP0404DGE-2PR |