Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1LV1616RSD-8SR Sram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3/3.3 V, Access Time-Max:85 ns
DescriptionRenesas Electronics Corporation R1LV1616RSD-8SR Sram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3/3.3 V, Access Time-Max:85 ns
DescriptionRENESAS R1LV1616RSD8SR Integrated Circuit, NPN Silicon Transistors with High Reverse Voltage NPN Silicon Transistors with High Reverse Voltage
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| # | Name |
|---|---|
| 1 | R1LV1616RSD-8SR |