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HAT2174H

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Renesas HAT2174H

Renesas HAT2174H overview

Renesas Electronics Corporation HAT2174H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN D...

Manufactured byRenesas
Part number or familyHAT2174H
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation HAT2174H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:30 mΩ
DescriptionRenesas Electronics Corporation HAT2174H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):20 A,Drain-source On Resistance-Max:30 m?
DescriptionRENESAS HAT2174H Integrated Circuit

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