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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SK2315TYTR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:450 mΩ
DescriptionRenesas Electronics Corporation 2SK2315TYTR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:450 mΩ
DescriptionRenesas Electronics America 2SK2315TYTR-E Discrete Semiconductor, MOSFET N-CH 60V 2A 4-UPAK
DescriptionRenesas Electronics Corporation 2SK2315TYTR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:450 mΩ
DescriptionMOSFET N-CH 60V 2A 4-UPAK
DescriptionRENESAS 2SK2315TYTR-E Discrete Semiconductor Products
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