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Product groupModules
DescriptionRenesas Electronics 2SJ352-E MOSFET, Trans MOSFET P-CH Si 200V 8A Automotive 3-Pin(3+Tab) TO-3P Tube
DescriptionRenesas Electronics Corporation 2SJ352-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A
DescriptionRenesas Electronics Corporation 2SJ352-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):8 A,Drain Current-Max (ID):8 A
DescriptionRENESAS 2SJ352-E Discrete Semiconductor Products
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