Renesas HAT2173H-EL-E overview
Renesas Electronics HAT2173H-EL-E MOSFET, Trans MOSFET N-CH Si 100V 25A 5-Pin(4+Tab) LFPAK T/R Renesas Electronics Corporation HAT2173H-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdow...
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Renesas Electronics HAT2173H-EL-E MOSFET, Trans MOSFET N-CH Si 100V 25A 5-Pin(4+Tab) LFPAK T/R Renesas Electronics Corporation HAT2173H-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdow...
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DescriptionRenesas Electronics HAT2173H-EL-E MOSFET, Trans MOSFET N-CH Si 100V 25A 5-Pin(4+Tab) LFPAK T/R
Description 1786379221Renesas Electronics Corporation HAT2173H-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):25 A, Drain Current-Max (ID):25 A, Drain-source On Resistance-Max:17.5 mΩ
Description 1786373078Renesas Electronics America HAT2173H-EL-E Discrete Semiconductor, MOSFET N-CH 100V 25A LFPAK
Description 1786367846MOSFET N-CH 100V 25A LFPAK
Description 1784011187RENESAS HAT2173H-EL-E HAT2173H-EL-E
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