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2SC458C

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Renesas 2SC458C

Renesas 2SC458C overview

Renesas Electronics Corporation 2SC458C Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V, Collector Current-Max (IC):100 mA, Polarity/Channel...

Manufactured byRenesas
Part number or family2SC458C
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SC458C Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):160, Transition Frequency-Nom (fT):230 MHz
DescriptionRenesas Electronics Corporation 2SC458C Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):160, Transition Frequency-Nom (fT):230 MHz
DescriptionRenesas Electronics Corporation 2SC458C Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):160, Transition Frequency-Nom (fT):230 MHz
DescriptionRENESAS/HITACHI 2SC458C SILICON NPN EPITAXIAL 100mA 30V -55~150℃ TO-92

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