Renesas 2SJ76-E overview
2SJ76-E is a transistor made by Renesas. Renesas Electronics Corporation 2SJ76-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:140 V, Number of Elements:1, Drain Current-Max (Abs) (ID):500 mA…
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SJ76-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:140 V, Number of Elements:1, Drain Current-Max (Abs) (ID):500 mA, Drain Current-Max (ID):500 mA
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