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R1RW0416DGE-2PR#B0

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Renesas R1RW0416DGE-2PR#B0

Renesas R1RW0416DGE-2PR#B0 overview

Renesas Electronics Corporation R1RW0416DGE-2PR#B0 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Acc...

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Part number or familyR1RW0416DGE-2PR#B0
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation R1RW0416DGE-2PR#B0 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:12 ns
DescriptionRenesas Electronics America R1RW0416DGE-2PR#B0 Integrated Circuit, IC SRAM 4M FAST 44-SOJ
DescriptionRenesas Electronics Corporation R1RW0416DGE-2PR#B0 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:12 ns

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Product group Modules Explore Modules Explore SRAM Explore Memory
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