Renesas HAT1069C-EL-E overview
HAT1069C-EL-E is an IC device made by Renesas. Renesas Electronics Corporation HAT1069C-EL-E Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:6, DS Breakdown Voltage-Min:12 V, Number of Elements:1…
Product details
Manufactured byRenesas
Product typeIC Device
DescriptionRenesas Electronics Corporation HAT1069C-EL-E Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:6, DS Breakdown Voltage-Min:12 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:93 mΩ
DescriptionRenesas Electronics America HAT1069C-EL-E Discrete Semiconductor, MOSFET P-CH SMD
DescriptionRenesas Electronics Corporation HAT1069C-EL-E Small Signal Field-effect Transistor, HAT1069C-EL-E
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Renesas
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Product type
IC Device
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