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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation RQA0001DNSTR-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:16 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (ID):800 mA
DescriptionRenesas Electronics Corporation RQA0001DNSTR-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:16 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (ID):800 mΩ
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