Renesas 2SK3390IXTB-E overview
2SK3390IXTB-E is a transistor made by Renesas. Renesas Electronics Corporation 2SK3390IXTB-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:17 V, Highest Frequency Band:ULTRA HIGH FREQUENCY…
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SK3390IXTB-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:17 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A
DescriptionRenesas Electronics Corporation 2SK3390IXTB-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:17 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A
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