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HSB83YPTR

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Renesas HSB83YPTR

Renesas HSB83YPTR overview

Renesas Electronics Corporation HSB83YPTR Rectifier Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1.2 V, Reverse Recovery Time-Max:100 ns, Reverse ...

Manufactured byRenesas
Part number or familyHSB83YPTR
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation HSB83YPTR Rectifier Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1.2 V, Reverse Recovery Time-Max:100 ns, Reverse Current-Max:100 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:300 V, Number of Elements:2
DescriptionRenesas Electronics Corporation HSB83YPTR Rectifier Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1.2 V, Reverse Recovery Time-Max:100 ns, Reverse Current-Max:100 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:300 V, Number of Elements:2
DescriptionRenesas Electronics Corporation HSB83YPTR Rectifier Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1.2 V, Reverse Recovery Time-Max:100 ns, Reverse Current-Max:100 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:300 V, Number of Elements:2

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Manufactured by Renesas View Renesas profile
Product group Modules Explore Modules Explore Rectifier Diodes
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