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RQA0002DNSTB-E

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Renesas RQA0002DNSTB-E

Renesas RQA0002DNSTB-E overview

Renesas Electronics Corporation RQA0002DNSTB-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUIL...

Manufactured byRenesas
Part number or familyRQA0002DNSTB-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation RQA0002DNSTB-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:16 V, Number of Elements:1, Drain Current-Max (ID):3.8 A
DescriptionRenesas Electronics Corporation RQA0002DNSTB-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:16 V, Number of Elements:1, Drain Current-Max (ID):3.8 A
DescriptionRenesas Electronics America RQA0002DNSTB-E Discrete Semiconductor, MOSFET N-CH HWSON2
DescriptionRenesas Electronics Corporation RQA0002DNSTB-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:16 V, Number of Elements:1, Drain Current-Max (ID):3.8 A

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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