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HAT2285WP-EL-E

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Renesas HAT2285WP-EL-E

Renesas HAT2285WP-EL-E overview

Renesas Electronics Corporation HAT2285WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMEN...

Manufactured byRenesas
Part number or familyHAT2285WP-EL-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation HAT2285WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):22 A, Drain Current-Max (ID):14 A, Drain-source On Resistance-Max:40 mΩ
DescriptionRenesas Electronics Corporation HAT2285WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):22 A, Drain Current-Max (ID):14 A, Drain-source On Resistance-Max:40 mΩ
DescriptionRenesas Electronics Corporation HAT2285WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):22 A, Drain Current-Max (ID):14 A, Drain-source On Resistance-Max:40 mΩ

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