HAT2217C-EL-E by Renesas | StockCheck - Aggregating Everything

Renesas HAT2217C-EL-E overview

HAT2217C-EL-E is a transistor made by Renesas. Renesas Electronics Corporation HAT2217C-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs)…

Manufactured byRenesas

Part number or familyHAT2217C-EL-E

Product typeTransistor

Product details

Manufactured byRenesas

Product typeTransistor

DescriptionRenesas Electronics Corporation HAT2217C-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):3 A, Drain-source On Resistance-Max:183 mΩ

DescriptionRenesas Electronics Corporation HAT2217C-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3 A,Drain Current-Max (ID):3 A,Drain-source On Resistance-Max:183 m?

Manufacturer, product group, and supply

See who makes this product, where it belongs, and where available inventory may be listed.

Manufactured by Renesas View Renesas profile

Product type Transistor Explore Transistor Explore Power Field-effect Transistors

Available from Sourcing support available Start a sourcing request