HAT2200WP-EL-E by Renesas | StockCheck

Renesas HAT2200WP-EL-E overview

Renesas Electronics Corporation HAT2200WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUIL...

Manufactured byRenesas

Part number or familyHAT2200WP-EL-E

Product groupModules

Product details

Manufactured byRenesas

Product groupModules

DescriptionRenesas Electronics Corporation HAT2200WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):20 A, Drain Current-Max (ID):20 A

DescriptionRenesas Electronics Corporation HAT2200WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:5,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):20 A,Drain Current-Max (ID):20 A

Manufacturer, product group, and supply

See who makes this product, where it belongs, and where available inventory may be listed.

Manufactured by Renesas View Renesas profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

Available from Sourcing support available Start a sourcing request