HAT2188WP-EL-E by Renesas | StockCheck

Renesas HAT2188WP-EL-E overview

Renesas Electronics Corporation HAT2188WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUIL...

Manufactured byRenesas

Part number or familyHAT2188WP-EL-E

Product groupModules

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Manufactured byRenesas

Product groupModules

DescriptionRenesas Electronics Corporation HAT2188WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:157 mΩ

DescriptionRenesas Electronics Corporation HAT2188WP-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:157 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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