Renesas HAT2016R-EL-E overview
HAT2016R-EL-E is a transistor made by Renesas. Renesas Electronics Corporation HAT2016R-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain…
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation HAT2016R-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):6.5 A, Drain Current-Max (ID):6.5 A, Drain-source On Resistance-Max:80 mΩ
DescriptionRenesas Electronics Corporation HAT2016R-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):6.5 A, Drain Current-Max (ID):6.5 A, Drain-source On Resistance-Max:80 mΩ
DescriptionRenesas Electronics Corporation HAT2016R-EL-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):6.5 A, Drain Current-Max (ID):6.5 A, Drain-source On Resistance-Max:80 mΩ
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