HAF2017-90STR-E by Renesas | StockCheck

Renesas HAF2017-90STR-E overview

Renesas Electronics Corporation HAF2017-90STR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUI...

Manufactured byRenesas

Part number or familyHAF2017-90STR-E

Product typeTransistor

Product details

Manufactured byRenesas

Product typeTransistor

DescriptionRenesas Electronics Corporation HAF2017-90STR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:53 mΩ

DescriptionRenesas Electronics Corporation HAF2017-90STR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):20 A,Drain-source On Resistance-Max:53 m?

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Product type Transistor Explore Transistor Explore Power Field-effect Transistors

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