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H5N3003P-E

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Renesas H5N3003P-E

Renesas H5N3003P-E overview

Renesas Electronics Corporation H5N3003P-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN ...

Manufactured byRenesas
Part number or familyH5N3003P-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation H5N3003P-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (ID):40 A, Drain-source On Resistance-Max:69 mΩ
DescriptionRenesas Electronics Corporation H5N3003P-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (ID):40 A, Drain-source On Resistance-Max:69 mΩ
DescriptionRenesas Electronics Corporation H5N3003P-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (ID):40 A, Drain-source On Resistance-Max:69 mΩ

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