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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation H5N2508DS-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (ID):7 A, Drain-source On Resistance-Max:630 mΩ
DescriptionRenesas Electronics Corporation H5N2508DS-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (ID):7 A,Drain-source On Resistance-Max:630 m?
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