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2SK3152-E

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Renesas 2SK3152-E

Renesas 2SK3152-E overview

Renesas Electronics Corporation 2SK3152-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN D...

Manufactured byRenesas
Part number or family2SK3152-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SK3152-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:120 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:170 mΩ
DescriptionRenesas Electronics Corporation 2SK3152-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:120 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:170 mΩ
DescriptionRenesas Electronics Corporation 2SK3152-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:120 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:170 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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