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2SK2932-E

Renesas · Transistor

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Renesas 2SK2932-E

Renesas 2SK2932-E overview

Renesas Electronics Corporation 2SK2932-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN D...

Manufactured byRenesas
Part number or family2SK2932-E
Product typeTransistor

Product details

Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SK2932-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):10 A, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:150 mΩ
DescriptionRenesas Electronics Corporation 2SK2932-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):10 A,Drain Current-Max (ID):10 A,Drain-source On Resistance-Max:150 m?

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Product type Transistor Explore Transistor Explore Power Field-effect Transistors
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