Renesas 2SK1807-E overview
Renesas Electronics Corporation 2SK1807-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN D...
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SK1807-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:4 Ω
DescriptionRenesas Electronics Corporation 2SK1807-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:4 Ω
DescriptionRenesas Electronics Corporation 2SK1807-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:4 Ω
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