Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SK1402A-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:2.6 Ω
DescriptionRenesas Electronics Corporation 2SK1402A-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:650 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4 A,Drain Current-Max (ID):4 A,Drain-source On Resistance-Max:2.6 ?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Renesas
View Renesas profile
Available from
Sourcing support available
Start a sourcing request