Renesas 2SK1341-E overview
2SK1341-E by Renesas is listed under Discrete Semiconductor Products. Renesas Electronics Corporation 2SK1341-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain…
Product details
Manufactured byRenesas
Product typeDiscrete Semiconductor Product
DescriptionRenesas Electronics Corporation 2SK1341-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:3 Ω
DescriptionRenesas Electronics America 2SK1341-E Discrete Semiconductor, MOSFET N-CH 900V 6A TO-3P
DescriptionMOSFET N-CH 900V 6A TO-3P
DescriptionRenesas Electronics Corporation 2SK1341-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:900 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6 A,Drain Current-Max (ID):6 A,Drain-source On Resistance-Max:3 ?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Renesas
View Renesas profile
Product type
Discrete Semiconductor Product
Explore Discrete Semiconductor Products Explore Transistor Explore Single-Channel MOSFET
Available from
Sourcing support available
Start a sourcing request