Renesas 2SK1340-E overview
2SK1340-E by Renesas is listed under Discrete Semiconductor Products. Renesas Electronics 2SK1340-E MOSFET, Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-3P Tube Renesas Electronics Corporation 2SK1340-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH…
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Manufactured byRenesas
Product typeDiscrete Semiconductor Product
DescriptionRenesas Electronics 2SK1340-E MOSFET, Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-3P Tube
DescriptionRenesas Electronics Corporation 2SK1340-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5 A, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:4 Ω
DescriptionRenesas Electronics Corporation 2SK1340-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5 A, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:4 Ω
DescriptionRenesas Electronics America 2SK1340-E Discrete Semiconductor, MOSFET N-CH 900V 5A TO-3P
DescriptionMOSFET N-CH 900V 5A TO-3P
DescriptionRenesas Electronics Corporation 2SK1340-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:900 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5 A, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:4 Ω
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Discrete Semiconductor Product
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