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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics 2SJ554-E MOSFET, Trans MOSFET P-CH Si 60V 45A 3-Pin(3+Tab) TO-3P Tube
DescriptionRenesas Electronics Corporation 2SJ554-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):45 A, Drain Current-Max (ID):45 A, Drain-source On Resistance-Max:55 mΩ
DescriptionRenesas Electronics Corporation 2SJ554-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):45 A, Drain Current-Max (ID):45 A, Drain-source On Resistance-Max:55 mΩ
DescriptionRenesas Electronics Corporation 2SJ554-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):45 A, Drain Current-Max (ID):45 A, Drain-source On Resistance-Max:55 mΩ
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