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2SJ552L-E

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Renesas 2SJ552L-E

Renesas 2SJ552L-E overview

Renesas Electronics 2SJ552L-E MOSFET, Trans MOSFET P-CH Si 60V 20A 3-Pin(3+Tab) LDPAK(L) Tube Renesas Electronics Corporation 2SJ552L-E Power Field-effect Trans...

Manufactured byRenesas
Part number or family2SJ552L-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics 2SJ552L-E MOSFET, Trans MOSFET P-CH Si 60V 20A 3-Pin(3+Tab) LDPAK(L) Tube
DescriptionRenesas Electronics Corporation 2SJ552L-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):20 A, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:95 mΩ
DescriptionRenesas Electronics Corporation 2SJ552L-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):20 A,Drain Current-Max (ID):20 A,Drain-source On Resistance-Max:95 m?

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