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2SJ549S-E

Renesas · Transistor

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Renesas 2SJ549S-E

Renesas 2SJ549S-E overview

Renesas Electronics Corporation 2SJ549S-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN ...

Manufactured byRenesas
Part number or family2SJ549S-E
Product typeTransistor

Product details

Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SJ549S-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:230 mΩ
DescriptionRenesas Electronics Corporation 2SJ549S-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:230 m?

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Product type Transistor Explore Transistor Explore Power Field-effect Transistors
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