Renesas 2SJ542-E overview
2SJ542-E is a transistor made by Renesas. Renesas Electronics 2SJ542-E MOSFET, Trans MOSFET P-CH Si 60V 18A 3-Pin(3+Tab) TO-220AB Tube Renesas Electronics Corporation 2SJ542-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of…
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics 2SJ542-E MOSFET, Trans MOSFET P-CH Si 60V 18A 3-Pin(3+Tab) TO-220AB Tube
DescriptionRenesas Electronics Corporation 2SJ542-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:110 mΩ
DescriptionRenesas Electronics Corporation 2SJ542-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:110 mΩ
DescriptionRenesas Electronics Corporation 2SJ542-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:110 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Renesas
View Renesas profile
Product type
Transistor
Explore Transistor Explore Transistors and Thyristors Explore FET Transistors
Available from
Sourcing support available
Start a sourcing request