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2SJ541-E

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Renesas 2SJ541-E

Renesas 2SJ541-E overview

Renesas Electronics 2SJ541-E MOSFET, Trans MOSFET P-CH Si 60V 15A 3-Pin(3+Tab) TO-220AB Tube Renesas Electronics Corporation 2SJ541-E Power Field-effect Transis...

Manufactured byRenesas
Part number or family2SJ541-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics 2SJ541-E MOSFET, Trans MOSFET P-CH Si 60V 15A 3-Pin(3+Tab) TO-220AB Tube
DescriptionRenesas Electronics Corporation 2SJ541-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):15 A, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:155 mΩ
DescriptionRenesas Electronics Corporation 2SJ541-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):15 A,Drain Current-Max (ID):15 A,Drain-source On Resistance-Max:155 m?

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