Renesas 2SJ531-E overview
2SJ531-E is a transistor made by Renesas. Renesas Electronics Corporation 2SJ531-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A…
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SJ531-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:110 mΩ
DescriptionRenesas Electronics Corporation 2SJ531-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:110 mΩ
DescriptionRenesas Electronics Corporation 2SJ531-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:110 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Renesas
View Renesas profile
Available from
Sourcing support available
Start a sourcing request