Renesas 2SJ529S-E overview
2SJ529S-E is a transistor made by Renesas. Renesas Electronics Corporation 2SJ529S-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):10 A…
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SJ529S-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:240 mΩ
DescriptionRenesas Electronics Corporation 2SJ529S-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):10 A,Drain-source On Resistance-Max:240 m?
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