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2SJ361RYTR-E

Renesas · Modules

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Renesas 2SJ361RYTR-E

Renesas 2SJ361RYTR-E overview

Renesas Electronics Corporation 2SJ361RYTR-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of ...

Manufactured byRenesas
Part number or family2SJ361RYTR-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SJ361RYTR-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:1.5 Ω
DescriptionRenesas Electronics Corporation 2SJ361RYTR-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:1.5 ?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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