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2SJ351-E

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Renesas 2SJ351-E

Renesas 2SJ351-E overview

Renesas Electronics Corporation 2SJ351-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DI...

Manufactured byRenesas
Part number or family2SJ351-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SJ351-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:180 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A
DescriptionRenesas Electronics Corporation 2SJ351-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:180 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A
DescriptionRenesas Electronics Corporation 2SJ351-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:180 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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