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Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics 2SJ247-E MOSFET, Trans MOSFET P-CH Si 100V 8A 3-Pin(3+Tab) TO-220AB Tube
DescriptionRenesas Electronics Corporation 2SJ247-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:450 mΩ
DescriptionRenesas Electronics Corporation 2SJ247-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:450 mΩ
DescriptionRenesas Electronics Corporation 2SJ247-E Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:450 mΩ
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