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2SJ1152STR-E

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Renesas 2SJ1152STR-E

Renesas 2SJ1152STR-E overview

Renesas Electronics Corporation 2SJ1152STR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-...

Manufactured byRenesas
Part number or family2SJ1152STR-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SJ1152STR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):1.5 A, Drain-source On Resistance-Max:6 Ω
DescriptionRenesas Electronics Corporation 2SJ1152STR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):1.5 A, Drain-source On Resistance-Max:6 Ω
DescriptionRenesas Electronics Corporation 2SJ1152STR-E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (ID):1.5 A, Drain-source On Resistance-Max:6 Ω

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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