Product details
Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SD2106-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000
DescriptionRenesas Electronics Corporation 2SD2106-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000
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