Renesas 2SD1138C-E overview
2SD1138C-E is an IC device made by Renesas. Renesas Electronics Corporation 2SD1138C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:150 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min…
Product details
Manufactured byRenesas
Product typeIC Device
DescriptionRenesas Electronics Corporation 2SD1138C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:150 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100
DescriptionRenesas Electronics Corporation 2SD1138C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:150 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100
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