Renesas 2SD1135C-E overview
2SD1135C-E is a transistor made by Renesas. Renesas Electronics Corporation 2SD1135C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min…
Product details
Manufactured byRenesas
Product typeTransistor
DescriptionRenesas Electronics Corporation 2SD1135C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):10 MHz
DescriptionRenesas Electronics Corporation 2SD1135C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):10 mΩz
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