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2SD1135C-E

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Renesas 2SD1135C-E

Renesas 2SD1135C-E overview

Renesas Electronics Corporation 2SD1135C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:N...

Manufactured byRenesas
Part number or family2SD1135C-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation 2SD1135C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):10 MHz
DescriptionRenesas Electronics Corporation 2SD1135C-E Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):10 mΩz

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Product group Modules Explore Modules Explore Transistor Explore Power Bipolar Transistors
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