Renesas 2SD1113C overview
Renesas Electronics Corporation 2SD1113C Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-N...
What is Renesas 2SD1113C?
Renesas Electronics Corporation 2SD1113C Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-N...
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DescriptionRenesas Electronics Corporation 2SD1113C Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):7 MHz
Description 1771295895Renesas Electronics Corporation 2SD1113C Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):7 mΩz
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