Renesas 2SB806KP overview
Renesas Electronics Corporation 2SB806KP Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):700 mA, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Freque...
What is Renesas 2SB806KP?
Renesas Electronics Corporation 2SB806KP Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):700 mA, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Freque...
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DescriptionRenesas Electronics Corporation 2SB806KP Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):700 mA, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):75 MHz
Description 1770979849Renesas Electronics Corporation 2SB806KP Power Bipolar Transistor, Collector-Emitter Voltage-Max:120 V, Collector Current-Max (IC):700 mΩ, Polarity/Channel Type:PNP, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):75 mΩz
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