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HVM187STR-E

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Renesas HVM187STR-E

Renesas HVM187STR-E overview

Renesas Electronics Corporation HVM187STR-E Pin Diode, Diode Capacitance-Max:2.4 pF, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:5.5 Ω, Diode El...

Manufactured byRenesas
Part number or familyHVM187STR-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation HVM187STR-E Pin Diode, Diode Capacitance-Max:2.4 pF, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:5.5 Ω, Diode Element Material:SILICON, Breakdown Voltage-Min:60 V, Diode Type:PIN DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:POSITIVE-INTRINSIC-NEGATIVE
DescriptionRenesas Electronics Corporation HVM187STR-E Pin Diode, Diode Capacitance-Max:2.4 pF, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:5.5 Ω, Diode Element Material:SILICON, Breakdown Voltage-Min:60 V, Diode Type:PIN DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:POSITIVE-INTRINSIC-NEGATIVE

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