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HVM14STR-E

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Renesas HVM14STR-E

Renesas HVM14STR-E overview

Renesas Electronics Corporation HVM14STR-E Pin Diode, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:7 Ω, Diode Element Material:SILICON, Breakdown...

Manufactured byRenesas
Part number or familyHVM14STR-E
Product groupModules

Product details

Manufactured byRenesas
Product groupModules
DescriptionRenesas Electronics Corporation HVM14STR-E Pin Diode, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:7 Ω, Diode Element Material:SILICON, Breakdown Voltage-Min:50 V, Diode Type:PIN DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:POSITIVE-INTRINSIC-NEGATIVE
DescriptionRenesas Electronics Corporation HVM14STR-E Pin Diode, Power Dissipation-Max:100 mW, Diode Forward Resistance-Max:7 Ω, Diode Element Material:SILICON, Breakdown Voltage-Min:50 V, Diode Type:PIN DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2, Technology:POSITIVE-INTRINSIC-NEGATIVE

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Product group Modules Explore Modules Explore Pin Diodes
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