RJP1CV3DPH-E0#T2 by Renesas | StockCheck

Renesas RJP1CV3DPH-E0#T2 overview

Renesas Electronics Corporation RJP1CV3DPH-E0#T2 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):15 A...

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Part number or familyRJP1CV3DPH-E0#T2

Product groupModules

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Manufactured byRenesas

Product groupModules

DescriptionRenesas Electronics Corporation RJP1CV3DPH-E0#T2 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO

DescriptionRenesas Electronics Corporation RJP1CV3DPH-E0#T2 IGBT, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO

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Product group Modules Explore Modules Explore Transistor Explore IGBTs

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