Raytheon 2N3632 overview
Raytheon Semiconductor 2N3632 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surfac...
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DescriptionRaytheon Semiconductor 2N3632 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):5, Transition Frequency-Nom (fT):250 mΩz
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