QIMONDA HYB18T1G800C4F-1.9 overview
HYB18T1G800C4F-1.9 is made by QIMONDA. Qimonda AG HYB18T1G800C4F-1.9 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:350 ps, Access Mode:MULTI BANK PAGE BURST
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Part number or familyHYB18T1G800C4F-1.9
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Manufactured byQIMONDA
DescriptionQimonda AG HYB18T1G800C4F-1.9 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:350 ps, Access Mode:MULTI BANK PAGE BURST
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