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LB501A

Polyfet RF Devices

Polyfet RF Devices LB501A

Polyfet RF Devices LB501A overview

Polyfet RF Devices LB501A Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS ...

Manufactured byPolyfet RF Devices
Part number or familyLB501A
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Product details

Manufactured byPolyfet RF Devices
DescriptionPolyfet RF Devices LB501A Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (ID):23 A

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